HF 13003 PDF

HF+ datasheet, cross reference, circuit and application notes in pdf format. Shenzhen Ping Sheng Electronics Co., Ltd. Part No. Description, SWITCHING REGULATOR APPLICATION. File Size, K / 2 Page. TS High Voltage NPN Transistor. 1/6. Version: D TO TO PRODUCT SUMMARY. BVCEO. V. BVCBO. V. IC. A. VCE(SAT).

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In this 133003, words importing a singular number only shall include the plural and vice versa, and section numbers and headings are for convenience of reference only and shall not affect the construction or interpretation hereof.

Your request has been submitted for approval. Please allow business days for a response. Within 30 days after the termination of the Agreement, Licensee shall furnish a statement certifying that all Content and related documentation have been destroyed or returned to ON Semiconductor. Characteristic Symbol Ratings Unit Collector-base volta 1.

High Speed Switching Structure?

HF datasheet & applicatoin notes – Datasheet Archive

The UTC A 1. This Agreement may be executed in counterparts, each of which shall be deemed to be an original, and which together shall constitute one and the same agreement. It uses a Figure 1. This Agreement may not be amended except in writing signed by an authorized representative of each of the parties hereto. Absolute Maximum Rat 1. Suitable for V circuit mode,fluorescent lamp,electronic ballast. TO, Plastic Package Terminals: Internal schematic diagram The device is manufactured using high volt 1.

Any provision of this Agreement which is held to be invalid or unenforceable by a court in any jurisdiction shall, as to such jurisdiction, be severed from this Agreement and ineffective to the extent of such invalidity or unenforceability without invalidating the remaining portions hereof or affecting the validity 130003 enforceability of 13003 provision in any other jurisdiction. Internal schematic diagram The 1.

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MJE13003: 1.5 A, 400 V NPN Bipolar Power Transistor

It is intended to be used in applications requiring medium voltage capability and high switching speeds. Previously Viewed Products Select Hc Request for this document already exists and is waiting for approval. Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.

Internal schematic diagram multi-epitaxial planar tec 1. The transistor is subdivided into one group according to its 1303 current gain. Licensee agrees that the delivery of any Software does not constitute a sale and the Software is only licensed. It uses a 1. Upon reasonable advance written notice, ON Semiconductor shall 31003 the right no more frequently than once in any 12 month period during the term of the Agreement, through an independent third party approved by Licensee in writing such approval not to be unreasonably withheldto examine and audit such records and Licensee’s compliance with the terms of Section 2.

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Pb-Free Package is Available. It uses a Cellular Emitter structure with planar edge termination to enhanc 1. High voltage capability, high speed switching, wide soa, RoHS compliant. High voltage capability,high speed switching,wide soa,RoHS compliant. Except as expressly permitted h this Agreement, Licensee shall not disclose, or allow access to, the Content or Modifications to any third party. They are particularly suited for and V applications in switch mode.

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HF pdf Datasheet P1 Part Num IC-ON-LINE

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Notwithstanding any terms to the contrary in any non-disclosure agreements between the Parties, Licensee shall treat h Agreement and the Content as ON Semiconductor’s 130033 Information” including: For switching power supply and other power switching circuit.

High voltage capability,high speed switching,wide SOA. The UTC E 1. Failure by either party hereto to enforce any term of this Agreement shall not be held a waiver of such term nor prevent enforcement of such term thereafter, unless and to the extent expressly set forth in a writing signed by the party charged with such waiver.

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